SKU: MZ-V9P4T0BW
Availability: In Stock
Brand: Samsung
Category: Storage - SSD
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The Samsung 990 PRO 4TB NVMe SSD delivers exceptional performance and reliability for high-end gaming, professional content creation, and demanding client PC applications. Leveraging PCIe Gen 4.0 x4 interface and NVMe 2.0 protocol, this M.2 2280 form factor SSD achieves blazing sequential read speeds up to 7,450 MB/s and write speeds up to 6,900 MB/s. Designed with Samsung's advanced V-NAND TLC technology and a powerful in-house controller with nickel coating, it ensures outstanding throughput and efficient thermal management with a heat spreader label and Dynamic Thermal Guard.
The 4TB variant supports up to 1,600,000 IOPS random read and 1,550,000 IOPS random write for ultra-responsive system performance. Power consumption is optimized for efficiency, averaging around 6.5 W system-level and peaking at 8.6 W, making it perfect for both desktops and gaming consoles like the PS5. It includes 4GB low-power DDR4 SDRAM cache for fast access and supports comprehensive features like AES 256-bit encryption, TRIM, S.M.A.R.T., and TCG/Opal/IEEE1667 security standards.
Samsung's Magician software enables users to manage firmware updates, performance tuning, and health monitoring easily. The SSD is built for durability, boasting a Mean Time Between Failures (MTBF) of 1.5 million hours and an impressive endurance rating of 2,400 TBW (terabytes written). Backed by a 5-year limited warranty, the Samsung 990 PRO ensures sustained high performance and data integrity.
Ideal for high-performance gaming rigs and workstations requiring massive storage and ultra-fast data access, the Samsung 990 PRO 4TB SSD is a top-tier solution that sets the standard for PCIe 4.0 NVMe performance.
| Warranty | 5-Year Limited Warranty |
| Operating Temperature | 0\u201370 \u00b0C |
| Shock Resistance | 1,500 G (0.5ms half sine) |
| MTBF | 1.5 million hours |
| Power Consumption (Burst) | Max 8.6 W |
| Power Consumption (Average) | Approx. 6.5 W |
| Endurance (TBW) | 2,400 TBW |
| Sequential Read Speed | Up to 7,450 MB/s |
| Sequential Write Speed | Up to 6,900 MB/s |
| Cache | 4 GB Low Power DDR4 SDRAM |
| Random Read IOPS | Up to 1,600,000 (4KB,QD32) |
| Random Write IOPS | Up to 1,550,000 (4KB,QD32) |
| Voltage | 3.3 V \u00b15% |
| Encryption | AES 256-bit (Class 0),TCG/Opal/IEEE1667 |
| Capacity | 4 TB |
| Interface | PCIe Gen 4.0 x4,NVMe 2.0 |
| Form Factor | M.2 2280 |