SKU: MZ-V9S2T0BW
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
100% Guarantee Safe Checkout
The Samsung 990 EVO Plus 2TB is a state-of-the-art PCIe Gen4 NVMe SSD designed for high-performance client PCs and gaming setups. Delivering blazing fast sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s, this M.2 2280 form factor drive leverages Samsung's proprietary V-NAND TLC technology coupled with an advanced in-house controller featuring a nickel-coated heat shield for superior thermal management and energy efficiency.
Key technologies include Intelligent TurboWrite 2.0 to enhance sustained write performance, dynamic thermal control with a heat spreader, and 73% improved MB/s per watt efficiency compared to previous generations. Security is robust with AES 256-bit full disk encryption, TCG/Opal V2.0 compliance, and IEEE1667 encrypted drive support.
With an endurance rating of 1200 TBW and backed by a 5-year limited warranty, the 990 EVO Plus ensures reliability under intensive read/write workloads. Compatible with PCIe Gen4 x4 and Gen5 x2 interfaces running NVMe 2.0 protocol, it features full support via Samsung Magician software for firmware updates and drive optimization. Perfect for users pushing the limits in gaming, content creation, and productivity, this SSD offers a future-proof storage solution with impressive speed, security, and longevity.
Highlights:
| Dimensions (WxHxD) | 80.15 x 22.15 x 2.38 mm |
| Heat Management | Nickel-coated heat shield,heat spreader label,Dynamic Thermal Guard |
| sequential_read_mbs | 7250 |
| Part Number | MZ-V9S2T0BW |
| Part Number | MZ-V9S2T0BW |
| Weight | Max 9.0g |
| weight_grams | 9 |
| Dimensions (mm) | 80.15, 22.15, 2.38 |
| Form Factor | M.2 2280 |
| Form Factor | M.2 2280 |
| Endurance (TBW) | 1200 TBW |
| Endurance (TBW) | 1200 |
| Warranty | 5-year limited warranty |
| Random Write IOPS | Up to 1,350K |
| Sequential Read Speed | Up to 7,250 MB/s |
| Sequential Write Speed | Up to 6,300 MB/s |
| Random Read IOPS | Up to 1,000K |
| sequential_write_mbs | 6300 |
| NAND Type | Samsung V-NAND TLC |
| Controller | Samsung in-house with nickel coating |
| Capacity | 2TB |
| Interface | PCIe Gen4 x4 \/ PCIe Gen5 x2 NVMe 2.0 |
| capacity_gb | 2000 |
| NAND Type | Samsung V-NAND TLC |
| Encryption | AES 256-bit,TCG/Opal V2.0,IEEE1667 |
| Drive Type | NVMe SSD (Internal) |