SKU: MZ-V9S1T0BW
Availability: In Stock
Brand: Samsung
Category: Solid State Drives (SSD)
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The Samsung 990 EVO Plus 1TB is a high-performance PCIe Gen5 NVMe SSD designed for client PCs and enthusiasts requiring blazing-fast storage. Featuring Samsung’s advanced V-NAND TLC technology combined with a nickel-coated in-house controller, this M.2 2280 SSD delivers sequential read speeds up to 7,150–7,250 MB/s and sequential write speeds up to 6,300 MB/s, ideal for gaming, content creation, and demanding workloads.
With an impressive random read/write IOPS performance of up to 850,000 / 1,350,000 (QD32 4KB), the drive ensures swift responsiveness and smooth multitasking. Its Intelligent TurboWrite 2.0 technology leverages an enlarged buffer region to maintain consistent write speeds during heavy use.
Developed for power efficiency, the SSD uses a nickel-coated controller to enhance MB/s per watt and provides advanced thermal control. Additional features include support for PCIe 4.0 x4 and PCIe 5.0 x2 NVMe 2.0 compatibility, AES 256-bit encryption (Class 0) for secure data handling, and integration with the Samsung Magician software suite for drive management.
Reliability is guaranteed with an MTBF of 1.5 million hours, shock tolerance of 1,500 G, operating temperature range of 0–70°C, and a manufacturer-backed 5-year limited warranty or 600 TBW endurance rating. The 990 EVO Plus is a top-tier choice for users seeking extreme speed, durability, and security in an M.2 SSD.
| Part Number | MZ-V9S1T0BW |
| Part Number | MZ-V9S1T0BW |
| Voltage | 3.3 V \u00b15% |
| Dimensions (WxHxD) | 80.15 x 22.15 x 2.38 mm |
| Shock Tolerance | 1,500 G,0.5 ms half sine |
| MTBF | 1.5 million hours |
| Technology Features | Intelligent TurboWrite 2.0,Host Memory Buffer (HMB) |
| sequential_read_mbs | 7150 |
| Weight | Max 9.0 g |
| Form Factor | M.2 2280 |
| Form Factor | M.2 2280 |
| weight_grams | 9 |
| Operating Temperature | 0\u201370\u00b0C |
| Warranty | 5-year limited or 600 TBW |
| Controller | Nickel-coated Samsung in-house controller |
| NAND Type | Samsung V-NAND TLC |
| Capacity | 1TB |
| NAND Type | Samsung V-NAND TLC |
| Interface | PCIe Gen4 x4 \/ PCIe Gen5 x2 NVMe 2.0 |
| capacity_gb | 1000 |
| NVMe Version | 2.0 |
| Backward Compatibility | PCIe Gen4 x4 |
| Features | Intelligent TurboWrite 2.0, Host Memory Buffer (HMB) |
| Random Write IOPS | Up to 1,350,000 (QD32 4KB) |
| Sequential Write Speed | Up to 6,300 MB/s |
| Random Read IOPS | Up to 850,000 (QD32 4KB) |
| Sequential Read Speed | Up to 7,150–7,250 MB/s |
| Random IOPS | 1350000 |
| sequential_write_mbs | 6300 |
| Random 4K Write IOPS | 1350000 |
| Random 4K Read IOPS | 850000 |
| Warranty (years) | 5 |
| mtbf_variant | Mean Time Between Failures (MTBF) |
| mtbf_hours | 1500000 |
| operating_temperature_c | 0\u201370\u00b0C |
| Encryption | AES 256-bit (Class 0) |
| Drive Type | NVMe SSD |
| Endurance (TBW) | 600 |
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